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Future Science Forum 2: To Discuss the Innovative Development of the Integrated Circuit Technology

Source:Original    Author:admin    Time:2019-04-23    View:14

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Pujiang Innovation Forum - The Future Science Forum 2 will be held at DongJiao State Guest Hotel on the afternoon of May 26. Organized by Fudan University, this special topic forum takes “The Next-generation Integrated Circuit Technology” as its theme. Many heavyweights will attend the forum and deliver speeches, including XU Ningsheng, Academician of Chinese Academy of Sciences and President of Fudan University; WANG Zhengping, Academician of National Academy of Engineering, USA, Foreign Academician of Chinese Academy of Engineering, and Regents’ Professor of Georgia Institute of Technology, USA; XU Juyan, Academician of Chinese Academy of Engineering, and LIU Ming, Academician of Chinese Academy of Sciences, Director of the Key Laboratory of Microelectronics and Integration Technology of the Chinese Academy of Sciences, and President of School of Microelectronics of University of Science and Technology of China.    


This special topic forum intends to gather world-class scientists to discuss the innovative development of the next-generation integrated circuit technology as well as study and judge the trends of revolutionary technological changes brought about by the advanced technological nodes of integrated circuit, so as to facilitate the innovative development of the semiconductor field of China and give suggestions to the integrated construction of integrated circuit in the Yangtze River Delta Region and the construction of Shanghai science and innovation center with global influence.    



What are the development trends of the innovative technologies of integrated circuit? According to ZHANG Wei, Distinguished Professor of the Chang Jiang Scholars Program of the Ministry of Education and Executive Director of School of Microelectronics of Fudan University, the integrated circuit industry is a fast-developing industry with a history of about 60 years. So far, Moore's law remains valid. The prediction made by Gordon Moore, Founder of Intel, is that the number and performance of the components and elements in an integrated circuit doubles every 18-24 months if prices remain the same. However, with the increasingly high level of chip integration, the scientific and technological circles and the industrial circles are facing greater and greater technological challenges. The 22-nm technological node is an example. The planar transistor has been upgraded to FinFET (Fin Field-Effect Transistor), a transistor with 3D structure. Fin refers to the thin flat part that sticks out from the body of a fish, and the shape of the transistor is similar to a fin.    



“Although FinFET has a better element property than planar transistor, its performance will become unsatisfactory and may be replaced by GAA transistor when the integrated circuit technology reaches the 5-nm technological node in the future.” ZHANG Wei says that it is then necessary to research and develop next-generation elements including GAA transistor, tunneling transistor and negative-capacitance transistor, and adopt new technologies, processes or materials, to further enhance the performance and density of transistors. The path of revolutionary technological change in this field will be one of the focuses of the discussion of Pujiang Innovation Forum - The Future Science Forum 2. At present, the 3D integration technology and 2D materials of chips are both expectable paths of innovative development.    




ZHANG Wei points out that the memory itself will also be a focus of the discussion in this special topic forum. For the non-volatile memory, scientific and technological circles and industrial circles are researching and developing resistive random-access memory, phase change memory, magnetic-core memory and so on with the goal of breaking through the performance of existing flash memory. Dynamic random-access memory (DRAM) is the most popular single-chip product in the market with a share of over 100 billion USD in the global market in 2018. However, DRAM chip technology has been hovering at the 19-nm node in recent years due to the constraints of the capacitance bottleneck. How can the scientists break through the capacitance bottleneck of the DRAM chip technology and achieve the leaping development of DRAM chip? To this end, “We hope to facilitate the industry-university-research cooperation through the Future Science Forum, so that universities, research institutions and the industry can innovate in a more cooperative way and jointly promote the innovative development of the integrated circuit technology of China.” ZHANG Wei says that the Yangtze River Delta Region is the region with the most advanced integrated circuit technology and the most complete industry chain in China. How can we synergize the national strategy to give play to the advantages of integrative development? This also requires full cooperation among enterprises, universities and research institutions. This forum will build a high-level platform for such cooperation.     


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